unisonic technologies co., ltd UTD410 power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r502-142.b n-channel enhancement mode ? description the UTD410 can provide excellent r ds(on) and low gate charge by using advanced trench technology. this UTD410 is suitable for using as a load switch or in pwm applications. ? features * v ds =30v, i d =8a * r ds(on) =48m ? @v gs =10v ? symbol sot-223 to-252 1 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UTD410l-tn3-r UTD410g-tn3-r to-252 g d s tape reel UTD410l-tn3-t UTD410g-tn3-t to-252 g d s tube UTD410l-aa3-r UTD410g-aa3-r sot-223 g d s tape reel
UTD410 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-142.b ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 continuous drain current i d 8 a pulsed drain current (note1) i dm 20 repetitive avalanche energy (l=0.1mh note1) e ar 10 mj power dissipation (t c =25c) to-252 p d 2 w sot-223 2.3 junction temperature t j +175 c storage temperature t stg -55 ~ +175 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stre ss ratings only and functional dev ice operation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient (t c =25c) to-252 ja 46 60 c/w sot-223 55 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250a 30 v drain-source leakage current i dss v ds =24v,v gs =0v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20v 100 na on characteristics gate-threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 1.8 3 v drain-source on-state resistance r ds(on) v gs =10v, i d =8a 48 65 m ? v gs =4.5v, i d =2a 75 105 dynamic characteristics input capacitance c iss v ds =15 v, v gs =0v, f=1mhz 288 pf output capacitance c oss 57 pf reverse transfer capacitance c rss 39 pf switching characteristics turn-on delay time t d ( on ) v gs =10v,v dd =15v, r l =1.8 ? , r g =3 ? 3.7 ns turn-on rise time t r 3.7 ns turn-off delay time t d ( off ) 15.6 ns turn-off fall-time t f 2.6 ns total gate charge q g v gs =10v, v ds =15v, i d =8a 6.72 nc gate-source charge q gs 0.76 nc gate-drain charge q gd 1.78 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0v, i s =1a 0.75 1 v maximum continuous drain-source diode forward current i s 4.3 a reverse recovery time t rr i f =8a, di f /dt=100a/ s 12.6 ns reverse recovery charge q rr 5.1 nc note: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board
UTD410 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-142.b ? typical characteristics continuous drain current, i d (a) continuous drain current, i d (a) on-resistance, r ds(on) (m ) normalized on-resistance 0 150 50 gate-source voltage, v gs (v) on-resistance, r ds(on) (m ) on-resistance vs. gate-source voltage 10 4 368 10 90 110 190 0.0 source-drain voltage, v sd (v) maximum continuous drain-source diode forward current, i s (a) body-diode characteristics 1.2 0.2 0.6 1.0 1.0e-06 i d =8a 0.8 0.4 125 25 170 130 70 30 125 25 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01
UTD410 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-142.b ? typical characteristics(cont.) 0 8 2 total gate charge, q g (nc) gate-source voltage, v gs (v) gate-charge characteristics 8 24 6 0 4 10 0 drain-source voltage, v ds (v) capacitance (pf) capacitance characteristics 30 51525 0 20 10 6 200 400 600 800 1000 1200 1400 v ds =15v i d =8a c iss c oss c rss continuous drain current, i d (a) power (w) 0.00001 pulse width (s) normalized transient thermal resistance, z ja normalized maximum tr ansient thermal impedance 0.1 0.0001 0.01 10 0.1 0.001 1 10 100 1000 1 0.01 single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on p d t
UTD410 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-142.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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